项目名称： 单根ZnO纳米线点缺陷的调控及其对光电性能与磁传输的影响

项目编号： No.51502178

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 一般工业技术

项目作者： 曾昱嘉

作者单位： 深圳大学

项目金额： 21万元

中文摘要： 半导体纳米线由于其特殊的尺寸与几何结构，有望成为纳米电子，纳米光电子等下一代新型器件的核心组成部分。ZnO材料由于其直接带隙结构、高激子束缚能、高电子迁移率等优点成为目前宽禁带半导体材料的研究热点。然而从材料研究的角度，围绕着缺陷、掺杂等方面ZnO的研究仍有许多亟待回答的关键科学问题。本项目选取ZnO纳米线为研究载体，通过惰性元素离子注入与后续热退火处理实现ZnO纳米线点缺陷的调控。在此基础上，通过研究单根ZnO纳米线场效应晶体管从可见到紫外波段的光学响应，揭示点缺陷与纳米线电学性能以及光响应的联系。最后，研究点缺陷对单根ZnO纳米线磁传输的影响，具体包括变温电学测试、磁电阻测试、自旋注入等方面。本项目针对ZnO材料目前存在的主要问题与面临的挑战，对其中部分关键科学问题进行深入研究，为ZnO纳米线在纳米电子与自旋电子学等方面的应用奠定基础。

中文关键词： ZnO；纳米线；点缺陷；掺杂；磁传输

英文摘要： Semiconductor nanowires with a large aspect ratio and a diameter below 100 nm promise to be important in the next-generation nanometer-scale devices due to the numerous unique properties that are expected for these (quasi-) one-dimensional systems. Among various semiconductors ZnO, by virtue of its excellent material properties, such as a wide direct bandgap of 3.37 eV at room temperature, a large exciton binding energy of 60 meV as well as high electron mobility and high thermal conductivity, have attracted particular attention as a revival semiconductor. However, as a new semiconductor, further development of ZnO based applications still requires complete control and understanding of the defects and doping. In this project the density of native point defects (Zn and O vacancies and interstitials) will be varied through noble gas ion irradiation - with different ion mass and fluence - and post thermal annealing. The response of the ZnO nanowires to the ultraviolet light as well as to the visible light will be studied in a field-effect transistor configuration. Finally, the effects of the point defects on the magnetotransport of individual ZnO nanowires will be investigated, which includes temperature dependence of the resistance, magnetoresistance and spin injection measurements. Within this research project we want to obtain an improved understanding of the formation of point defects and its effects on optoelectronic properties as well as magnetotransport of ZnO nanowires, which is crucial for future ZnO based optoelectronic and spintronics devices.

英文关键词： ZnO;nanowires;point defects;doping;magnetotransport