This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-efficient computation over conventional DRAM-based approaches. Unlike conventional 1T-1C dynamic RAM (DRAM), which incurs refresh overhead, 2T-nC FeRAM offers a promising alternative as a non-volatile memory solution with low energy consumption. Our key findings include the potential of quasi-nondestructive readout (QNRO) sensing in 2T-nC FeRAM for logic-in-memory (LiM) applications, demonstrating its inherent capability to perform inverting logic without requiring external modifications, a feature absent in traditional 1T-1C DRAM. We successfully implement the MINORITY function within a single cell of 2T-nC FeRAM, enabling universal NAND and NOR logic, validated through SPICE simulations and experimental data. Additionally, the research investigates the feasibility of 3D integration with 2T-nC FeRAM, showing substantial improvements in storage and computational density, facilitating bulk-bitwise computation. Our evaluation of eight real-world, data-intensive applications reveals that 2T-nC FeRAM achieves 2x higher performance and 2.5x lower energy consumption compared to DRAM. Furthermore, the thermal stability of stacked 2T-nC FeRAM is validated, confirming its reliable operation when integrated on a compute die. These findings emphasize the advantages of 2T-nC FeRAM for LiM, offering superior performance and energy efficiency over conventional DRAM.

翻译：本研究提出了一种新颖的配置方法，利用2T-nC铁电存储器实现单胞内存逻辑运算，突显其在能效计算方面相较于传统基于DRAM方法的优势。与需要刷新操作的传统1T-1C动态存储器不同，2T-nC FeRAM作为一种非易失性存储器解决方案，具有低能耗的显著特点。我们的核心发现包括：2T-nC FeRAM中的准非破坏性读出传感技术在内存逻辑应用中的潜力，其无需外部修改即可执行反相逻辑的固有能力——这是传统1T-1C DRAM所不具备的特性。我们成功在单个2T-nC FeRAM单元中实现了MINORITY函数，从而构建了通用的NAND与NOR逻辑，该功能已通过SPICE仿真和实验数据验证。此外，本研究探讨了2T-nC FeRAM三维集成的可行性，结果显示其在存储密度和计算密度上的显著提升，为批量位运算提供了支持。通过对八个实际数据密集型应用的评估，2T-nC FeRAM相比DRAM实现了2倍的性能提升和2.5倍的能耗降低。进一步地，堆叠式2T-nC FeRAM的热稳定性得到验证，确认其在计算芯片集成环境下的可靠运行。这些发现充分证明了2T-nC FeRAM在内存逻辑应用中的优势，其性能与能效均优于传统DRAM。