Prior works propose SRAM-based TRNGs that extract entropy from SRAM arrays. SRAM arrays are widely used in a majority of specialized or general-purpose chips that perform the computation to store data inside the chip. Thus, SRAM-based TRNGs present a low-cost alternative to dedicated hardware TRNGs. However, existing SRAM-based TRNGs suffer from 1) low TRNG throughput, 2) high energy consumption, 3) high TRNG latency, and 4) the inability to generate true random numbers continuously, which limits the application space of SRAM-based TRNGs. Our goal in this paper is to design an SRAM-based TRNG that overcomes these four key limitations and thus, extends the application space of SRAM-based TRNGs. To this end, we propose TuRaN, a new high-throughput, energy-efficient, and low-latency SRAM-based TRNG that can sustain continuous operation. TuRaN leverages the key observation that accessing SRAM cells results in random access failures when the supply voltage is reduced below the manufacturer-recommended supply voltage. TuRaN generates random numbers at high throughput by repeatedly accessing SRAM cells with reduced supply voltage and post-processing the resulting random faults using the SHA-256 hash function. To demonstrate the feasibility of TuRaN, we conduct SPICE simulations on different process nodes and analyze the potential of access failure for use as an entropy source. We verify and support our simulation results by conducting real-world experiments on two commercial off-the-shelf FPGA boards. We evaluate the quality of the random numbers generated by TuRaN using the widely-adopted NIST standard randomness tests and observe that TuRaN passes all tests. TuRaN generates true random numbers with (i) an average (maximum) throughput of 1.6Gbps (1.812Gbps), (ii) 0.11nJ/bit energy consumption, and (iii) 278.46us latency.

翻译：先前的作品提出基于 SRAM46 的TRNG, 从 SRAM 阵列中提取 TRNAM 。 SRAM 阵列被广泛用于大多数专门或一般用途芯片, 用于计算芯片中存储数据。 因此, 基于 SRAM 的TRNG 提供了一种低成本的硬件TRNG 的替代。 但是, 现有的基于 SRAM 的TRNNG 的TRNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNT 无法持续生成真实的随机数字, 这限制了基于 SRAM 的TRNJNNNNNNG的应用空间。 我们本文的目标是设计一个基于 SRAM 的TRNNNNNG 芯片芯片的芯片芯片, 从而克服了这四个关键部分的 SRAM TRAG 的随机数字 。 为此, 我们提议TRAM 将一个新的高通量、高耗耗、高耗、高耗耗能的SLSDQNQNDLDLD 的电压 和低的电压的电压 的电路段 使用。