In this work, we predict the emergence of the valley Edelstein Effect (VEE), which is an electric-field-induced spin polarization effect, in gated monolayer transition metal dichalcogenides (MTMDs). We found an unconventional valley-dependent response in which the spin-polarization is parallel to the applied electric field with opposite spin-polarization generated by opposite valleys. This is in sharp contrast to the conventional Edelstein effect in which the induced spin-polarization is perpendicular to the applied electric field. We identify the origin of VEE as combined effects of conventional Edelstein effect and valley-dependent Berry curvatures induced by coexisting Rashba and Ising SOCs in gated MTMDs. Experimental schemes to detect the VEE are also considered.

翻译：在这项工作中,我们预测了Edelstein山谷效应(VEE)的出现,这是电场诱发的旋转两极分化效应,在封闭的单层过渡金属三卤化物(MTMDs)中出现。我们发现了一种非常规的山谷依赖反应,在这种反应中,旋转极化与应用电场平行,由相反的山谷产生的相反的旋转极化。这与传统的Edelstein效应形成鲜明对比,在这种效应中,诱发的旋极化与应用电场直接相关。我们确定VEE的起源是传统的Edelstein效应和由拉什巴和Ising SOCs在封闭的MTMDs中共存而导致的依赖山谷曲线的综合效应。还考虑了检测VEE的实验计划。