Memristive crossbar arrays (MCA) are emerging as efficient building blocks for in-memory computing and neuromorphic hardware due to their high density and parallel analog matrix-vector multiplication capabilities. However, the physical properties of their nonvolatile memory elements introduce new attack surfaces, particularly under fault injection scenarios. This work explores Laser Fault Injection as a means of inducing analog perturbations in MCA-based architectures. We present a detailed threat model in which adversaries target memristive cells to subtly alter their physical properties or outputs using laser beams. Through HSPICE simulations of a large MCA on 45 nm CMOS tech. node, we show how laser-induced photocurrent manifests in output current distributions, enabling differential fault analysis to infer internal weights with up to 99.7% accuracy, replicate the model, and compromise computational integrity through targeted weight alterations by approximately 143%.

翻译：忆阻交叉阵列因其高密度和并行模拟矩阵-向量乘法能力，正逐渐成为内存计算和神经形态硬件的高效构建模块。然而，其非易失性存储单元的物理特性引入了新的攻击面，尤其在故障注入场景下。本研究探讨了激光故障注入作为在基于忆阻交叉阵列的架构中诱发模拟扰动的手段。我们提出了一个详细的威胁模型，其中攻击者利用激光束针对忆阻单元，以微妙改变其物理特性或输出。通过对45纳米CMOS工艺节点上的大型忆阻交叉阵列进行HSPICE仿真，我们展示了激光诱导光电流如何在输出电流分布中显现，从而支持差分故障分析以推断内部权重（准确率高达99.7%）、复制模型，并通过针对性权重改变（约143%）破坏计算完整性。