The continuous miniaturisation of metal-oxide-semiconductor field-effect transistors (MOSFETs) from long- to short-channel architectures has advanced beyond the predictions of Moore's Law. Continued advances in semiconductor electronics, even near current scaling and performance boundaries under cryogenic conditions, are driving the development of innovative device paradigms that enable ultra-low-power and high-speed functionality. Among emerging candidates, the Josephson Junction Field-Effect Transistor (JJFET or JoFET) provides an alternative by integrating superconducting source and drain electrodes for efficient, phase-coherent operation at ultra-low temperatures. These hybrid devices have the potential to bridge conventional semiconductor electronics with cryogenic logic and quantum circuits, enabling energy-efficient and high-coherence signal processing across temperature domains. This review traces the evolution from Josephson junctions to field-effect transistors, emphasising the structural and functional innovations that underpin modern device scalability. The performance and material compatibility of JJFETs fabricated on Si, GaAs, and InGaAs substrates are analysed, alongside an assessment of their switching dynamics and material compatibility. Particular attention is given to superconductor-silicon-superconductor Josephson junctions as the active core of JJFET architectures. By unfolding more than four decades of experimental progress, this work highlights the promise of JJFETs as foundational building blocks for next-generation cryogenic logic and quantum electronic systems.

翻译：金属氧化物半导体场效应晶体管（MOSFET）从长沟道到短沟道架构的持续微型化已超越摩尔定律的预测。即使在当前低温条件下的尺寸缩放与性能边界附近，半导体电子学的持续进展仍推动着创新器件范式的开发，以实现超低功耗与高速功能。在众多新兴候选器件中，约瑟夫森结场效应晶体管（JJFET或JoFET）通过集成超导源极和漏极，为超低温下的高效、相位相干操作提供了替代方案。这类混合器件有望连接传统半导体电子学与低温逻辑及量子电路，实现跨温度域的高能效、高相干信号处理。本文回顾了从约瑟夫森结到场效应晶体管的发展历程，重点阐述了支撑现代器件可扩展性的结构与功能创新。分析了基于硅、砷化镓和铟镓砷衬底制备的JJFET的性能与材料兼容性，并评估了其开关动力学特性与材料适配度。特别关注作为JJFET架构核心的超导体-硅-超导体约瑟夫森结。通过梳理超过四十年的实验进展，本研究凸显了JJFET作为下一代低温逻辑与量子电子系统基础构建模块的潜力。