项目名称: 基于增益调控的连续超宽带波长调谐外腔面发射半导体激光器研究
项目编号: No.61474118
项目类型: 面上项目
立项/批准年度: 2015
项目学科: 无线电电子学、电信技术
项目作者: 张星
作者单位: 中国科学院长春光学精密机械与物理研究所
项目金额: 84万元
中文摘要: 可调谐半导体激光器在光通讯和大气环境监控等领域均已得到重要应用。然而,波长调谐范围长期受限于量子阱增益带宽成为了发展宽带波长调谐半导体激光器的瓶颈。针对上述问题,本项目提出以外腔面发射激光器结构为基础,通过对激光器增益芯片的多周期量子阱进行增益调控,使阱间增益谱形成频移复合展宽,波长调谐范围有效突破量子阱增益带宽极限的新方法和系统研究。具体包括:(1)基于多周期量子阱带隙梯度设计的增益调控及频移复合展宽机制分析,包括复合展宽增益谱的特性、热动力学和激光物理效应;(2)增益频移复合展宽芯片研制;(3)谐振腔设计、滤波选频技术及调制器研制;(4)多芯片组合增益谱二次展宽实验及机理研究。本项研究的代表性指标包括在900-1000 nm波段获得大于3 W基模输出功率并达到连续波长调谐宽度超过量子阱增益带宽极限100%以上的国际前沿水平。
中文关键词: 外腔面发射半导体激光器;波长调谐;增益调控
英文摘要: Tunable semiconductor lasers have exhibited wide and prospective applications in the fields of optical communications and atmopheric environmental monitoring. However, the tunable wavelength range limited by the quantum well gain bandwidth has been a bottleneck in the further development of broad-band tuning range of semiconductor lasers.Thus, we are proposing a research project, which is about a new mechanism and method study of making the tunable wavelength range able to effectively break through the gain bandwidth limitation of the well from the gain spectrum broadening by the gain detuning and superposition control between different groups of quantum wells in the laser chip based on the external-cavity surface-emitting laser configuration. The concrete work involves: (1) analysis of the gain broadening mechanism from the gain detuning and superposition of the multi-periods of quantum wells, including the characteristics of the broadened gain spectra from the superposition, thermodynamics and laser physical effects; (2) design and fabrication of the laser chips with the superposed and broadened gain; (3) design of the cavity, wavelength filtering and selection technique as well as the relevant modulator preparation; (4) gain re-broadening mechanism with the multi-chip combination. In the near-infrared band of 900-1000 nm, more than 3 W of TEM00 output power and the tunable wavelength range over the gain bandwidth of the well by more than 100% are achieved.
英文关键词: external-cavity surface-emitting semiconductor laser;wavelength tuning;gain controlling