项目名称： 纳米尺度自旋电子器件参数化电路模型建立方法的研究

项目编号： No.61774078

项目类型： 面上项目

立项/批准年度： 2018

项目学科： 无线电电子学、电信技术

项目作者： 姜岩峰

作者单位： 江南大学

项目金额： 16万元

中文摘要： 基于自旋器件的电路由于不挥发、低功耗、控制方便等特点，具有极大的应用潜力和市场价值，是“后摩尔时代”集成电路持续发展的主要突破口之一。目前迫切需要建立与实际器件对接的自旋器件模型，通过模型建立起工业界和学术界沟通的桥梁，从而推动自旋器件和电路的发展。本基金项目的研究目标是建立参数化的自旋器件模型，与目前存在的其它功能描述性模型不同，本项目所建立的参数化模型适用于GMR、MTJ、FTJ等几种主要自旋器件，既能描述自旋器件的静态参数、动态参数，也包含器件的尺寸效应和温度效应；具有精确度高、仿真速度快、与工艺结合紧密等特点，其中模型包含的参数由器件特性测量方法直接提取得到。项目研究中所包含的基础性研究问题包括底层元件模型参数提取方法、自旋器件尺寸效应等，本项目对于自旋电子学的发展具有重要的科学意义和应用前景。

中文关键词： 自旋电子器件；电路模型；磁翻转机制；尺寸效应；随机效应

英文摘要： Electrical Circuit based on spintronic devices, termed as spintronic circuit, is characterized as non-volatile, low power and easy controlling. It has great application potential and market value and is being treated as breakthrough point in Post-Moore-Age to continue the development of integrated circuit. Currently it is urgently required to set up spintronic device's model to reflect the characterization of actual prepared spintronic devices, acting as the bridge between industry and academic. This is really helpful to push forward the progress of spintronic device and circuit. The main goal of this project is to set up a parametric spin device's equivalent model, being dramatically different from current existing functional device model. The setting-up parametric spin device's model is suitable for several kinds of spin devices, including GMR, MTJ and FTJ and the model includes static parameters, dynamic parameters. At the same time, other effects, such as scaling effect and thermal effect are also included . The simulation result based on the parametric model has the merits of high resolution, fast speed and connecting closely with fabrication technology. The parameters in the model can be extracted directly from device's measurement. The fundamental research in the project includes parameter extraction method, scaling effects, et al.. The project has important scientific meaning and potential application scenario.

英文关键词： Spintronic Electron Device;Electrical Circuit Macro-model;Magnetic Switching Mechanism;Scaling Effect;Stochastical Effect