Achieving reliable resistive switching in oxide-based memristive devices requires precise control over conductive filament (CF) formation and behavior, yet the fundamental relationship between oxide material properties and switching uniformity remains incompletely understood. Here, we develop a comprehensive physical model to investigate how electrical and thermal conductivities influence CF dynamics in TaOx-based memristors. Our simulations reveal that higher electrical conductivity promotes oxygen vacancy generation and reduces forming voltage, while higher thermal conductivity enhances heat dissipation, leading to increased forming voltage. The uniformity of resistive switching is strongly dependent on the interplay between these transport properties. We identify two distinct pathways for achieving optimal High Resistance State (HRS) uniformity with standard deviation-to-mean ratios as low as 0.045, each governed by different balances of electrical and thermal transport mechanisms. For the Low Resistance State (LRS), high uniformity (0.009) can be maintained when either electrical or thermal conductivity is low. The resistance ratio between HRS and LRS shows a strong dependence on these conductivities, with higher ratios observed at lower conductivity values. These findings provide essential guidelines for material selection in RRAM devices, particularly for applications demanding high reliability and uniform switching characteristics.

翻译：实现氧化物基忆阻器件中可靠的电阻开关特性，需要对导电细丝（CF）的形成与行为进行精确控制，然而氧化物材料特性与开关均匀性之间的基本关系仍未完全明晰。本文建立了一个全面的物理模型，以研究电导率和热导率如何影响TaOx基忆阻器中的导电细丝动力学。我们的模拟结果表明，较高的电导率会促进氧空位的生成并降低形成电压，而较高的热导率则增强散热，导致形成电压升高。电阻开关的均匀性在很大程度上取决于这两种输运特性之间的相互作用。我们识别出两种不同的途径，可以实现最优的高阻态（HRS）均匀性（标准差与均值之比低至0.045），每种途径由不同的电学和热学输运机制平衡所主导。对于低阻态（LRS），当电导率或热导率任一较低时，均可保持高均匀性（0.009）。高阻态与低阻态之间的电阻比显示出对这些电导率和热导率的强烈依赖性，在较低的电导率或热导率值下观察到较高的比值。这些发现为阻变存储器（RRAM）器件的材料选择提供了重要指导，特别是对于要求高可靠性和均匀开关特性的应用。