Processing-in-memory (PIM) is attractive to overcome the limitations of modern computing systems. Numerous PIM systems exist, varying by the technologies and logic techniques used. Successful operation of specific logic functions is crucial for effective processing-in-memory. Memristive non-stateful logic techniques are compatible with CMOS logic and can be integrated into a 1T1R memory array, similar to commercial RRAM products. This paper analyzes and demonstrates two non-stateful logic techniques: 1T1R logic and scouting logic. As a first step, the used 1T1R SiO\textsubscript{x} valence change mechanism memristors are characterized in reference to their feasibility to perform logic functions. Various logical functions of the two logic techniques are experimentally demonstrated, showing correct functionality in all cases. Following the results, the challenges and limitations of the RRAM characteristics and 1T1R configuration for the application in logical functions are discussed.

翻译：存内计算（PIM）技术有望突破现代计算系统的局限。现有多种PIM系统因采用的技术与逻辑方法而异，其中特定逻辑功能的成功实现对于高效存内处理至关重要。忆阻非状态型逻辑技术与CMOS逻辑兼容，并可集成至类似商用RRAM产品的1T1R存储阵列中。本文分析并验证了两种非状态型逻辑技术：1T1R逻辑与探测逻辑。首先，对采用1T1R结构的SiO\textsubscript{x}价键变化机制忆阻器进行表征，评估其执行逻辑功能的可行性。随后，通过实验展示了两种逻辑技术的多种逻辑功能，所有情形均验证了正确的功能实现。基于实验结果，本文探讨了RRAM特性及1T1R构型在逻辑功能应用中的挑战与局限性。