Multiple patterning lithography (MPL) has been widely used to improve lithography resolution in advanced nodes, but it faces cost limits as feature sizes shrink. Directed self-assembly (DSA) offers a cost-effective complement, extending the resolution of optical lithography to sub-10 nm and beyond. Integrating DSA into MPL (DSA-MP) further enhances the resolution of contact/via patterning. Nevertheless, growing design complexity exposes the limits of existing decomposition methods, which struggle to balance solution quality and runtime, and neglect edge-to-edge spacing constraints of DSA templates, compromising manufacturability. To address these issues, we introduce a new conflict graph model capturing the previously overlooked constraints and develop a local refinement strategy powered by the graph neural network, enabling efficient and scalable layout decomposition. Experiments demonstrate that our method achieves higher solution quality with faster convergence than state-of-the-art methods, while maintaining robustness across layout scales, design styles, technology nodes, and varying mask counts.

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