As the size of transistors approaches the mesoscopic scale, existing energy consumption analysis methods exhibit various limits, especially when being applied to describe the non-equilibrium information processing of transistors at ultra-low voltages. The stochastic thermodynamics offers a theoretic tool to analyze the energy consumption of transistor during the non-equilibrium information processing. Based on this theory, an information energy ratio of XOR gate composed of single-electron transistors is proposed at the mesoscopic scale, which can be used to quantify the exchange between the information and energy at XOR gates. Furthermore, the energy efficiency of the parity check circuit is proposed to analyze the energy consumption of digital signal processing systems. Compared with the energy efficiency of parity check circuit adopting the 7 nm semiconductor process supply voltage, simulation results show that the energy efficiency of the parity check circuit is improved by 266% when the supply voltage is chosen at a specified value.

翻译：随着晶体管尺寸接近介观尺度，现有能耗分析方法在描述超低电压下晶体管非平衡信息处理时展现出各种局限性。随机热力学为分析晶体管在非平衡信息处理过程中的能耗提供了理论工具。基于该理论，本文提出了介观尺度下由单电子晶体管构成的XOR门的信息能量比，该参数可用于量化XOR门处信息与能量之间的交换。此外，本文还提出了奇偶校验电路的能效指标，用于分析数字信号处理系统的能耗。与采用7纳米半导体工艺供电电压的奇偶校验电路能效相比，仿真结果表明，当供电电压选取特定值时，奇偶校验电路的能效提升了266%。