Low-power SRAM architectures are especially sensitive to many types of defects that may occur during manufacturing. Among these, resistive defects can appear. This paper analyzes some types of such defects that may impair the device functionalities in subtle ways, depending on the defect characteristics, and that may not be directly or easily detectable by traditional test methods, such as March algorithms. We analyze different methods to test such defects and discuss them in terms of complexity and test time.

翻译：低功率的SRAM结构对制造过程中可能出现的许多类型的缺陷特别敏感,其中,可出现阻力缺陷。本文分析某些类型的缺陷,这些缺陷可能会根据缺陷特征以微妙的方式损害装置的功能,而且可能无法直接或容易地通过传统的测试方法(如三月算法)探测出来。我们分析不同方法来检验这些缺陷,并从复杂性和测试时间的角度讨论这些缺陷。