This work proposes a methodology to estimate the statistical distribution of the probability that a 6T bit-cell starts up to a given logic value in SRAM memories for PUF applications. First, the distribution is obtained experimentally in a 65-nm CMOS device. As this distribution cannot be reproduced by electrical simulation, we explore the use of an alternative parameter defined as the distance between the origin and the separatrix in the bit-cell state space to quantify the mismatch of the cell. The resulting distribution of this parameter obtained from Monte Carlo simulations is then related to the start-up probability distribution using a two-component logistic function. The reported results show that the proposed imbalance factor is a good predictor for PUF-related reliability estimation with the advantage that can be applied at the early design stages.

翻译：本研究提出一种方法，用于估算SRAM存储器中6T存储单元在PUF应用场景下启动至特定逻辑值的概率统计分布。首先，通过在65纳米CMOS器件上的实验获得了该分布。由于该分布无法通过电学仿真复现，我们探索使用状态空间中原点与分界线距离这一替代参数来量化存储单元的失配程度。通过蒙特卡洛仿真获得该参数的分布后，我们采用双分量逻辑函数将其与启动概率分布建立关联。实验结果表明，所提出的失配因子能够有效预测PUF相关可靠性指标，其优势在于可在设计早期阶段应用。