Emerging non-volatile memories (NVMs) represent a disruptive technology that allows a paradigm shift from the conventional von Neumann architecture towards more efficient computing-in-memory (CIM) architectures. Several instrumentation platforms have been proposed to interface NVMs allowing the characterization of single cells and crossbar structures. However, these platforms suffer from low flexibility and are not capable of performing CIM operations on NVMs. Therefore, we recently designed and built the NeuroBreakoutBoard, a highly versatile instrumentation platform capable of executing CIM on NVMs. We present our preliminary results demonstrating a relative error < 5% in the range of 1 k$\Omega$ to 1 M$\Omega$ and showcase the switching behavior of a HfO$_2$/Ti-based memristive cell.

翻译：新兴非易失性存储器（NVMs）代表一种颠覆性技术，能够实现从传统冯·诺依曼架构向更高效率的存内计算（CIM）架构的范式转变。目前已有多款测试平台被提出用于连接非易失性存储器，以实现单单元和交叉阵列结构的特性表征。然而，这些平台灵活性较低，且无法在非易失性存储器上执行存内计算操作。为此，我们近期设计并构建了高度通用的测试平台NeuroBreakoutBoard，该平台能够针对非易失性存储器执行存内计算。我们展示了初步实验结果，在1 kΩ至1 MΩ范围内实现了相对误差低于5%，并演示了基于HfO₂/Ti的忆阻单元的开关行为。