项目名称： 底栅结构InGaZnO薄膜晶体管的背沟道表面修饰、电荷转移及新耦合电学特性研究

项目编号： No.61474126

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 曹鸿涛

作者单位： 中国科学院宁波材料技术与工程研究所

项目金额： 76万元

中文摘要： 引入新耦合功能的薄膜晶体管已成为国际研究热点，其引人之处在于为传统电子开关元器件赋予新功能，实现多功能集成。本项目以底栅结构InGaZnO薄膜晶体管为研究对象，利用p型NiO微纳结构修饰背沟道表面，在外励光信号作用下，诱发的定向电荷转移使得沟道内载流子浓度发生变化，从而反映在栅压可调控的电学输出特性上。研究暗光和光照条件对NiO和背沟道之间的电荷转移方向的影响，揭示栅压有效调控下的晶体管场效应迁移率、阈值电压、开关比及亚阈值摆幅的变化趋势，阐明半导体德拜屏蔽长度、沟道体电子陷阱密度、沟道/介电界面处电子陷阱密度的变化规律，结合器件的半导体能带结构，建立器件工作的物理模型。本项目通过在背沟道上构筑修饰物诱发光信号和电信号之间的关联耦合，体现了器件结构设计创新性和器件新功能开发的创新思路。通过本项目的实施，有望推动新功能集成的电子学器件的研发进程，具有重要的科学研究和现实应用意义。

中文关键词： 氧化物半导体；薄膜晶体管；背沟道；电荷转移；电学特性

英文摘要： As one of the hot topics, thin film transistors coupled with brand new functionalities are emerging devices, which have gained ever-increasing attention because they would allow to combine new functionalities into the conventional electronic switch component to realize multi-function integrated devices. This project will focus on the well-planned research objectives, highlighted as the bottom gate InGaZnO thin film transistor and its foreign matter decorated back channel, to study the gate-tunable electrical characteristics triggered by the variations of the carrier concentration in the channel due to the external light illumination excited directional charge transfer between NiO micro/nano structures and back channel layer. The approving project implementation is based on revealing the direction of the charge transfer responded to the light stimuli, uncovering the variation trends of the electrical characteristics, including field-effect mobility, threshold voltage, on-off current ratio and subthreshold swing, and so on, illuminating the effect of the Debye screening length, the channel bulk trap density, and the interfacial trap density on the electrical performance, and eventually building a physical model to describe the working mechanism of the device with the help of the band diagram. The aim of this project lies in establishing the coupling relationship between the electrical and optical signals, reflecting the innovation for the device structure and the creative thinking on exploring novel devices as well. It is expected that the successful implementation of this project would pave the way for the development of novel function integrated electronics, which has great significance whether for the scientific research or for the practical applications.

英文关键词： Oxide Semiconductor;Thin-film transistor;Back channel;Charge transfer;Electrical characteristics