项目名称： 敏化的高阈值体系下亚衍射极限纳米光刻极限尺度研究

项目编号： No.11504030

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 数理科学和化学

项目作者： 李理

作者单位： 长春理工大学

项目金额： 20万元

中文摘要： 利用聚焦激光焦点附近的尖端触发阈值反应是获得亚衍射极限特征尺寸的一种有效途径，如何创造尽可能尖锐的尖端是这一途径的核心。高阈值反应天然占据尖端较为尖锐的位置，具有较大亚衍射潜力；问题在于，高阈值还带来了阈值反应对激光响应的迟钝性。因此，高阈值体系钝性及内在机制、敏化方法及背后的物理过程具有重要的研究价值。前期工作中，我们针对铂/硅体系进行了简易敏化，使铂线的特征尺寸从200nm(波长/5)下降到了18nm(波长/60）；敏化过程面临复杂的阈值效应，只改变铂厚度一个变量，出现了4种不同的阈值现象。本研究将从有限时域差分法模拟场强分布入手，从场到热用双温分子动力学建模，在此基础上解释钝性、敏化、多阈值现象的内在机制，并提出和实践新的敏化方法，从而进一步减小亚衍射极限纳米光刻的极限尺度，进而为金属纳米图案制备提供一种新方法、新工艺。本项目预期发表5篇以上SCI期刊论文。

中文关键词： 纳米光刻；亚衍射极限特征尺寸；金属纳米图案；高阈值光刻；敏化

英文摘要： The one of most valid strategies for achieving sub-diffraction feature size is using the pinpoint of focusing laser spot triggering the threshold responses. For this strategy, how to create a sharper intensity pinpoint plays a pivotal role. Therefore, the exploration of sensitization methods and the physical process behind these are important current challenges. High threshold reaction presents the advantage of sharper pinpoint of laser intensity, however, faces the problem of great threshold inertia in laser-induced threshold reaction. In our early stage work, we sensitized Pt/Si materials system by a simple process, which diminished the minimal feature sizes from 200nm (wavelength/5) to 18nm (wavelength/60). Sensitization is complicated that 4 different threshold phenomenon occurred for just changing the thickness of Pt film. This topic will start from simulating field distribution by finite difference time domain method. Then, the internal mechanism and process of high threshold systems will be discussed from field and heat angle. Based on these discussions, multi-threshold phenomenon cloud be interpreted, and the new sensitization methods cloud be proposed and practiced. Our research could offer new processing method and new technology for the fabrication of metallic nano-pattern arrays. We plan to publish at least 5 SCI articles during our research.

英文关键词： Optical nano-lithography;Sub-dffraction-limited feature size;Metallic nano-pattern;High threshold lithography;Sensitization