This article presents a reconfigurable physically unclonable function (PUF) design fabricated using 65-nm CMOS technology. A subthreshold-inverter-based static PUF cell achieves 0.3% native bit error rate (BER) at 0.062-fJ per bit core energy efficiency. A flexible, native transistor-based voltage regulation scheme achieves low-overhead supply regulation with 6-mV/V line sensitivity, making the PUF resistant against voltage variations. Additionally, the PUF cell is designed to be reconfigurable with no area overhead, which enables stabilization without redundancy on chip. Thanks to the highly stable and self-regulated PUF cell and the zero-overhead stabilization scheme, a 0.00182% native BER is obtained after reconfiguration. The proposed design shows 0.12%/10 {\deg}C and 0.057%/0.1-V bit error across the military-grade temperature range from -55 {\deg}C to 125 {\deg}C and supply voltage variation from 0.7 to 1.4 V. The total energy per bit is 15.3 fJ. Furthermore, the unstable bits can be detected by sweeping the body bias instead of temperature during enrollment, thereby significantly reducing the testing costs. Last but not least, the prototype exhibits almost ideal uniqueness and randomness, with a mean inter-die Hamming distance (HD) of 0.4998 and a 1020x inter-/intra-die HD separation. It also passes both NIST 800-22 and 800-90B randomness tests.

翻译：本条展示了使用65毫毫米 CMOS 技术的可重新配置的物理不可调试功能(PUF) 。 一个基于基底阈值的静态 PUF 电池达到0.3% 本地比特误差率(BER) 0.62-fJ / 位核心能源效率。 一个基于本地晶体管的电压调制方案实现了6-mV/V 敏感度的低顶部供应管制,使PUF抗电压变异。 此外, PUF 电池的设计是可重新配置的,没有区域管理,因此可以稳定芯片。由于高度稳定和自我管制的PUF 电池和零过度稳定计划,在重新配置后获得了0.00182%的本地比特差率。 拟议的设计显示0.12%/ / / 6/deg} C 和 0.057%/ / 0-V 位错误在军事级别温度温度范围从- 55 69=20 C 到 125 exdeg} C 和供应量从0.7 V 至 1.4 节调调调调调调, 芯片。 由于高度自我调节的能量 和 10.3 度测试,最后的能量 10- mex- hex 度的温度测试, 10- mex 和最低温度的温度 测试 和最低温度的温度 和最低温度 测试,可以大大的温度 。