项目名称： 纳米缝隙场发射真空晶体管结构与特性研究

项目编号： No.61771383

项目类型： 面上项目

立项/批准年度： 2018

项目学科： 无线电电子学、电信技术

项目作者： 吴胜利

作者单位： 西安交通大学

项目金额： 16万元

中文摘要： 场发射真空晶体管作为一种真空微电子器件，基于真空沟道实现电子的准弹道传输，有望提高器件的高频工作特性，同时采用半导体平面工艺制备可使器件保持固态器件小型化的优势，其研究已引起国内外研究人员的广泛关注。本项目将表面传导电子发射源的纳米缝隙电子发射与真空晶体管相融合，围绕作为场发射真空晶体管关键问题的栅极调制和大气环境下的稳定工作开展研究。项目将理论分析与数值模拟相结合，研究分析纳米缝隙场发射真空晶体管中栅极对场发射电子的调制机理；提出以表面传导电子发射源中的纳米缝隙可控制备技术制作横向真空沟道和控制多层薄膜中间介质层厚度结合刻蚀工艺制作纵向真空沟道两种技术方案，可分别用于平面栅型和垂直结构场发射真空晶体管的简单制备。项目研究有望阐明场发射真空晶体管的工作机理，为制备此类器件提供一种简单的技术思路，为真空晶体管的发展及实用化提供理论指导和技术支持。项目研究具有重要的科学意义与现实意义。

中文关键词： 纳米场致发射；冷阴极；纳电子学；场发射真空晶体管

英文摘要： Vacuum field-emission transistor (VFET) is a kind of vacuum microelectronics devices. VFET is expected to have good high frequency performance since the use of vacuum channel allows quasi ballistic transport of electrons, it also keeps the advantages of the miniaturization of solid state device due to the use of semiconductor planar process. Therefore, research on VFET has attracted wide attentions both domestic and abroad. In this study, the field electron emission from nano-scale fissure of surface conduction electron emitter (SCE) is integrated into VFET, and the key issues of gate modulation mechanism and the working stability in atmospheric environment for VFET will be investigated..The mechanism of VFET’s gate modulation on field emission electrons from the nano-scale fissure will be investigated by combining use of theoretical analysis and numerical simulation. Two technical schemes for preparing vacuum channels used correspondingly in the plane grating type and vertical structure VFETs are proposed. In the first scheme, the horizontal vacuum channel is fabricated by using controllable nano-scale fissure fabrication technology adopted in SCE. In the second scheme, the longitudinal vacuum channel is fabricated by controlling the intermediate medium thickness of multilayer film in combination with the etching process..It is expected that this research will clarify the working mechanisms of VFET, provide a simple technology way for fabricating such devices. The research results can provide the theoretical guidance and technical support for the development and practical application of VFET. Therefore, this research has important scientific and practical significance.

英文关键词： Nano field emission;Cold cathode;Nanoelectronics;Field-emission vacuum transistor