项目名称： 大容量高性能IGBT模块分析模型及封装关键技术研究

项目编号： No.51477152

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 电工技术

项目作者： 陈敏

作者单位： 浙江大学

项目金额： 80万元

中文摘要： 大容量电力电子器件是可再生能源发电系统、智能电网、轨道交通等所有大容量电力电子系统中的关键元件，其大容量额定运行时的电磁热可靠性问题是限制其发展和应用的关键问题。大容量IGBT模块内部结构的电磁动态模型是分析如何抑制功率模块电压应力和磁场干扰的基础，因此本项目首先开展大容量IGBT模块电磁热多场分析模型的建模研究，在此基础上，探索大容量IGBT模块的布局演绎方法和电磁热特性优化设计技术，目的是使大容量IGBT模块在额定运行时具有芯片低电压应力，低损耗，热均匀分布，从而提高IGBT模块的电磁热可靠性。然后基于IGBT模块内部等效电路参数探索大容量IGBT模块的失效预测方法，降低停机维护成本。针对大容量高效率的应用场合，研制1200V/600A的T型三电平IGBT功率模块，验证本项目提出的理论和方法。预期成果可为大容量IGBT功率模块的工程化实践提供理论指导。

中文关键词： 大容量；IGBT模块；布局优化；失效预测；可靠性

英文摘要： High capacity power device is the key component for the high capacity power electronic system, such as the renewable energy power system, smart grid system and rail transit power system. When the high power system is operating at the rated condition, the electrical, magnetic and thermal problem became the key issue to limit the widely using of high power IGBT module. The IGBT module electricity and magnetism dynamic model is the basis to analyze how to limit the voltage stress and electromagnetic interference. In order to increase the reliability and decrease the maintenance downtime cost, the following research is needed to carry out. Firstly, this project will carry out the research of multi-field analysis model for IGBT module. Secondly, this project will study the layout deducing method and electro-thermal characteristic optimization technique to make the IGBT module which have the characteristic of low chip voltage stress, low loss and equalized thermal distribution, thus increase the reliability for IGBT module. Thirdly, In order to decrease maintenance downtime cost, the high capacity IGBT module failure prediction is studied based on the module equivalent circuit parameters. Finally, a 1200V/600A T-type three level IGBT module is made for the high power and high efficiency application to verify the proposed theories and control method. The results of high power IGBT module are expected to provide theoretical support for the engineering design.

英文关键词： High Power;IGBT Module;Layout Optimization;Faliure Prediction;Reliablity