This paper presents EMSpice~3, a full-chip multiphysics framework for coupled electromigration (EM), thermomigration (TM), and IR-drop analysis of practical power-grid (P/G) networks. The framework is, to our knowledge, the first EM-IR analysis flow that jointly incorporates Joule heating and practical spatial thermal profiles for full-chip P/G network designs. It operates on extracted power-grid netlists and combines an immortality check, transient EM/TM stress evolution, void-induced resistance updates, repeated IR-drop recomputation, and optional Monte Carlo lifetime prediction. To make chip-level EM analysis tractable, the framework integrates an extended rational Krylov subspace method into the transient solver, achieving $1.18\times$--$1.50\times$ speedup with sub-0.05% reported TTF/final-IR metric error relative to the default non-Krylov FDTD analysis across six benchmark designs. The numerical results reveal that the specific spatial temperature profile can have a more significant impact on P/G network lifetime than the average temperature itself. In the RISC-V core, a higher-average-temperature profile can avoid the 10% IR-drop failure threshold when its hotspots are less aligned with critical current paths, while mapped temperature gradients can move the critical void location and change which resistor branches are degraded. Monte Carlo analysis further shows design-specific variation sensitivity: under 20% variation in EM diffusivity and critical stress, the RISC-V core exhibits about 15.8% TTF coefficient of variation, whereas the ARM Cortex-A logic core exhibits only 0.0058\%. These results show that practical thermal profiles, resistance feedback, and stochastic material variation must be considered jointly for predictive full-chip EM-IR analysis.

翻译：本文提出EMSpice~3，一个面向实际电源/地（P/G）网络的全芯片多物理场框架，用于耦合电迁移（EM）、热迁移（TM）及IR压降分析。据我们所知，该框架是首个在P/G网络设计中联合考虑焦耳热与实际空间热分布的EM-IR分析流程。该框架基于提取的电源网络网表运行，整合了不朽性检查、瞬态EM/TM应力演化、空洞诱导电阻更新、重复IR压降重算以及可选的蒙特卡洛寿命预测。为提升芯片级EM分析的可处理性，该框架在瞬态求解器中集成了扩展有理Krylov子空间方法，在六个基准设计中，相对于默认的非Krylov FDTD分析，实现1.18倍–1.50倍加速，且报告的时间失效因子（TTF）/最终IR度量误差低于0.05%。数值结果表明，特定空间温度分布对P/G网络寿命的影响可能比平均温度本身更为显著。在RISC-V内核中，若高热点分布与关键电流路径错位，即使具有更高平均温度的温度分布仍可避免10% IR压降失效阈值；而映射的温度梯度可改变关键空洞位置并改变退化电阻支路。蒙特卡洛分析进一步揭示了设计特定的变异敏感性：当EM扩散系数与临界应力的变异幅度为20%时，RISC-V内核的TTF变异系数约为15.8%，而ARM Cortex-A逻辑内核仅为0.0058%。这些结果表明，实际热分布、电阻反馈及随机材料变异必须联合考虑，以实现具有预测能力的全芯片EM-IR分析。