Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and area. Additionally, volatile memristors are useful as selector devices and for hardware security circuits such as physical unclonable functions. To facilitate the design and simulation of circuits, a compact behavioral model is essential. This paper proposes V-VTEAM, a compact, simple, general, and flexible behavioral model for volatile memristors, inspired by the VTEAM nonvolatile memristor model and developed in MATLAB. The validity of the model is demonstrated by fitting it to an ion drift/diffusion-based Ag/SiOx/C/W volatile memristor, achieving a relative root mean error square of 4.5%.

翻译：易失性忆阻器作为神经形态电路中极具前景的器件，近年来受到广泛关注。它能够模拟神经元的泄漏功能，并且在功耗和面积方面相较于基于电容的电路具有优势。此外，易失性忆阻器可用作选通器件，并适用于硬件安全电路，如物理不可克隆功能。为促进电路的设计与仿真，一个紧凑的行为模型至关重要。本文受非易失性忆阻器模型VTEAM的启发，在MATLAB中开发了V-VTEAM模型——一种紧凑、简单、通用且灵活的易失性忆阻器行为模型。通过将该模型拟合至基于离子漂移/扩散机制的Ag/SiOx/C/W易失性忆阻器，验证了其有效性，相对均方根误差达到4.5%。