In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a 1-Transistor-1-Memristor configuration. Compared to the reference sample where no NPs were embedded, an enlarged memory window was recorded in conjunction with reduced variability for both switching states. A comprehensive numerical model was also applied to shed light on this enhanced performance, which was attributed to the spatial confinement effect induced by the presence of the Pt NPs and its impact on the properties of the percolating conducting filaments (CFs). Although 5-bit precision was demonstrated with the application of the incremental-step-pulse-programming (ISPP) algorithm, the reset process was unreliable and the output current increased abnormally when exceeded the value of 150 uA. As a result, the multibit operation was limited. To address this issue, a modified scheme was developed to accurately control the distance between the various resistance levels and achieve highly reliable 6-bit precision. Our work provides valuable insights for the development of energy-efficient memories for applications where a high density of conductance levels is required.

翻译：本研究采用优化方法，在1晶体管-1忆阻器构型中，实现了由Ag/铂纳米颗粒(NPs)/SiO2/TiN多层结构组成的两端存储器件稳定低功耗多比特操作。与未嵌入纳米颗粒的参照样品相比，该器件在两种开关状态下均表现出扩大的存储窗口及降低的性能波动性。通过综合数值模型分析，这种性能提升可归因于铂纳米颗粒引发的空间限制效应及其对渗透导电细丝(CFs)特性的影响。虽然采用增量步进脉冲编程(ISPP)算法实现了5位精度，但复位过程不可靠，且当输出电流超过150微安时会出现异常增大，导致多比特操作受限。为解决该问题，本研究开发了改进方案以精确控制不同电阻态间距，最终实现了高可靠性的6位精度操作。本工作为开发需要高电导态密度的节能存储器提供了重要参考。