Semiconductor quantum dot (QD) devices have become central to advancements in spin-based quantum computing. As the complexity of QD devices grows, manual tuning becomes increasingly infeasible, necessitating robust and scalable autotuning solutions. Tuning large arrays of QD qubits depends on efficient choices of automated protocols. Here, we introduce a bootstrapping, autonomous testing, and initialization system (BATIS), an automated framework designed to streamline QD device testing and initialization. BATIS navigates high-dimensional gate voltage spaces, automating essential steps such as leakage testing and gate characterization. The current channel formation protocol follows a novel and scalable approach that requires a single measurement regardless of the number of channels. Demonstrated at 1.3 K on a quad-QD Si/Si$_x$Ge$_{1-x}$ device, BATIS eliminates the need for deep cryogenic environments during initial device diagnostics, significantly enhancing scalability and reducing setup times. By requiring minimal prior knowledge of the device architecture, BATIS represents a platform-agnostic solution, adaptable to various QD systems, which bridges a critical gap in QD autotuning.

翻译：半导体量子点（QD）器件已成为自旋量子计算发展的核心。随着QD器件复杂度的增加，手动调控日益不可行，亟需稳健且可扩展的自动调控解决方案。调控大规模QD量子比特阵列依赖于自动化协议的高效选择。本文提出一种引导、自主测试与初始化系统（BATIS），这是一个旨在简化QD器件测试与初始化流程的自动化框架。BATIS能够在高维栅极电压空间中导航，自动化执行漏电流测试与栅极表征等关键步骤。其电流通道形成协议采用新颖且可扩展的方法，无论通道数量多少仅需单次测量即可完成。在四量子点Si/Si$_x$Ge$_{1-x}$器件上于1.3 K温度下进行的实验表明，BATIS可在初始器件诊断阶段避免使用深低温环境，显著提升了可扩展性并缩短了系统准备时间。由于对器件架构的先验知识需求极低，BATIS成为一种与平台无关的解决方案，可适配于各类QD系统，从而填补了QD自动调控领域的关键空白。