Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field programmable arrays (FPGAs). However, these circuits are constrained by the limited tuning speed and large power consumption of the phase shifters used. In this paper, introduced for the first time are memresonators, or memristors heterogeneously integrated with silicon photonic microring resonators, as phase shifters with non-volatile memory. These devices are capable of retention times of 12 hours, switching voltages lower than 5 V, an endurance of 1,000 switching cycles. Also, these memresonators have been switched using voltage pulses as short as 300 ps with a record low switching energy of 0.15 pJ. Furthermore, these memresonators are fabricated on a heterogeneous III-V/Si platform capable of integrating a rich family of active, passive, and non-linear optoelectronic devices, such as lasers and detectors, directly on-chip to enable in-memory photonic computing and further advance the scalability of integrated photonic processor circuits.

翻译：近年来，可编程光子集成电路作为深度神经网络、量子计算和现场可编程门阵列（FPGA）的潜在硬件框架引起了广泛关注。然而，这类电路受限于所用移相器的调谐速度有限且功耗较高。本文首次提出将忆阻器与硅光子微环谐振器异质集成的忆阻谐振器，作为具有非易失性存储特性的移相器。该器件可实现12小时的保持时间、低于5V的开关电压以及1000次开关周期的耐久性。同时，这些忆阻谐振器可通过短至300皮秒的电压脉冲进行开关切换，创下0.15皮焦耳的开关能耗新纪录。此外，该忆阻谐振器基于异质III-V/Si平台制造，可直接在芯片上集成包括激光器和探测器在内的丰富有源、无源及非线性光电器件，从而支持存内光子计算，并进一步推动集成光子处理器电路的可扩展性。