Crystalline materials, such as metals and semiconductors, nearly always contain a special defect type called dislocation. This defect decisively determines many important material properties, e.g., strength, fracture toughness, or ductility. Over the past years, significant effort has been put into understanding dislocation behavior across different length scales via experimental characterization techniques and simulations. This paper introduces the dislocation ontology (DISO), which defines the concepts and relationships related to linear defects in crystalline materials. We developed DISO using a top-down approach in which we start defining the most general concepts in the dislocation domain and subsequent specialization of them. DISO is published through a persistent URL following W3C best practices for publishing Linked Data. Two potential use cases for DISO are presented to illustrate its usefulness in the dislocation dynamics domain. The evaluation of the ontology is performed in two directions, evaluating the success of the ontology in modeling a real-world domain and the richness of the ontology.

翻译：晶体材料（如金属和半导体）几乎总是包含一种称为位错的特殊缺陷类型。这种缺陷决定性决定了诸多重要材料性能，例如强度、断裂韧性或延展性。近年来，研究人员通过实验表征技术和模拟方法，在不同尺度上理解位错行为方面付出了巨大努力。本文介绍了位错本体（DISO），它定义了与晶体材料线性缺陷相关的概念和关系。我们采用自上而下的方法开发了DISO，即从定义位错领域最通用的概念开始，随后对这些概念进行特化。DISO通过持久化URL发布，遵循W3C关于发布关联数据的最佳实践。本文展示了DISO的两个潜在应用案例，以说明其在位错动力学领域的实用性。本体评估从两个方向开展：评估本体对真实世界领域建模的成功程度以及本体的丰富性。